El Segundo, Calif. — International Rectifier (IR) has introduced the IRS2336xD 600-V three-phase gate driver ICs with integrated bootstrap functionality for appliance motor control, servo drives, ...
The purpose of this paper is to demonstrate a systematic approach to design high-performance bootstrap gate drive circuits for high-frequency, high-power, and high-efficiency switching applications ...
Allegro MicroSystems has created an isolated gate driver IC for GaN power transistors that has no need for high-side bootstrapping nor the provision of a secondary side drive supply voltage. Instead, ...
Packing bootstrap functionality, the IRS2336xD 600V three-phase protected gate drivers find employment in motor control, servo drives, micro-inverter drives, and a range of general-purpose ...
GaN (gallium nitride) E-HEMTs (High Electron Mobility Transistors) have altered the dynamics of power electronics in consumer electronics, datacenters, industrial motors, appliances, and ...
STMicroelectronics has created its first galvanically isolated gate driver for GaN transistors. Called STGAP2GS the wide body SO-8W packaged single-channel driver can work with rails up to 1.2kV. The ...