Description: An introduction to most aspects of large-scale MOS integrated circuit design including: device fabrication and modeling; useful circuit building blocks; system considerations; and ...

Fabrication of resistors, capacitors, p-n junction and Schottky barrier diodes, BJT's and MOS devices and integrated circuits. Topics include: silicon structure, wafer preparation, sequential ...

Large capacity Content Addressable Memory (CAM) is a key element in wide variety of applications. A major challenge in realization of such systems is the complexities of scaling MOS transistors.

MosChip Institute of Silicon Systems (M-ISS), a subsidiary of MosChip Technologies, has signed an agreement with Cadence Design Systems to expand the scope of the training of students in VLSI (Very ...