The rise in electric vehicle (EV) adoption, renewable energy investments, and advancements in power electronics are key driving forces. Leading manufacturers are actively expanding production ...

DURHAM, N.C.--(BUSINESS WIRE)--Wolfspeed, Inc. (NYSE: WOLF), a global leader in innovative silicon carbide power solutions, today announced a collaboration with Hopewind, a global innovator in ...

GE Aerospace and Wolfspeed announced a Memorandum of Understanding to collaborate on high-voltage silicon carbide power electronics for aerospace and defense. The agreement focuses on next generation ...

How the fast switching speeds and other characteristics of SiC devices create new challenges in DC-link capacitor design. Key ...

CREE has developed a new MOSFET that could be suitable for silicon-carbide-based string inverters above 10 kW in size. The U.S. manufacturer says switching losses are 20% lower with the new transistor ...

No two technologies have generated more buzz in power semiconductors in recent years than GaN (Gallium Nitride) and SiC (Silicon Carbide). Both these wide band-gap (WBG) semiconductors offer several ...

DURHAM, N.C.--(BUSINESS WIRE)-- Cree, Inc. (Nasdaq: CREE), the global leader in silicon carbide technology through its Wolfspeed business, today announced that Shenzhen Gospower Digital Technology Co.

Silicon carbide (SiC), a semiconductor compound consisting of silicon (Si) and carbon (C), belongs to the wide bandgap (WBG) family of materials. Its physical bond is very strong, giving the ...

Hitachi, Ltd. today announced the development of an original energy saving power semiconductor structure, TED-MOS, using next-generation silicon carbide (SiC) material that contributes to saving ...

DURHAM, N.C.--(BUSINESS WIRE)--Cree, Inc. (Nasdaq: CREE), the global leader in silicon carbide technology through its Wolfspeed business, today announced that Shenzhen Gospower Digital Technology Co., ...