A study revealed that a simple thermal reaction of gallium nitride with metallic magnesium results in the formation of a distinctive superlattice structure. This represents the first time researchers ...

In Gallium Nitride (GaN) implanted with a small amount of magnesium (Mg), NIMS succeeded for the first time in visualizing the distribution and optical behavior of the implanted Mg at the nanoscale ...

The rapid growth of critical technologies such as 5G telecommunications and electric mobility demands higher power densities, faster switching frequencies, and greater thermal resilience than is ...

Gallium nitride (GaN) is quickly becoming the semiconductor material of choice for both RF/microwave and higher-wavelength devices. It has long been a semiconductor foundation for light-emitting ...

TORRANCE, Calif. and HYDERABAD, India, Dec. 08, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (NVTS) Corporation (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) ...

While silicon remains the mainstream power semiconductor material, silicon carbide (SiC) and gallium nitride (GaN) are seen more suitable for power semiconductor devices needed by electric cars and ...

DURHAM, N.C.--(BUSINESS WIRE)--Cree, Inc. (Nasdaq: CREE) announces the qualification and production release of two new GaN processes: G40V4, a 0.25µm process with operating drain voltage up to 40V, ...

Not that long ago, the application of SiC and GaN devices was still considered to be difficult, but in 2018, the advantages of these technologies started being applied to real life. What are the ...

The US, China and Japan are working on research and development in gallium oxide crystal growth and productionizing gallium oxide chips. The Gallium oxide chips can have a voltage resistance value 3 ...

In Gallium Nitride (GaN) implanted with a small amount of magnesium (Mg), scientists succeeded for the first time in visualizing the distribution and optical behavior of the implanted Mg at the ...